Analysis of High Temperature Characteristics and Latch-up Failure of IEGT

The latch-up effect of the planer gate electron injection enhancement gate transistor (IEGT) is introduced. Influences of temperature on the key characteristic parameters, such as, the on-state voltage drop, forward blocking voltage, switching time, are discussed. Conducting, blocking and switching characteristics at high temperature of IEGT are simulated by ISE simulator. Lastly, the failure reason and safe operation area (SOA) of IEGT devices at high temperature is analyzed and the improvement measures are presented.