Kinetic study of ZrO 2 -CVD process

As silicon complementary MOS are scaled below 100 nm, high-k gate dielectrics will be required to obtain equivalent oxide thickness (EOT) < 1.0 nm. Among various candidates to replace SiO/sub 2/, ZrO/sub 2/ has attracted a lot of attention recently due to their thermodynamic stability in contact with Si. We investigated ZrO/sub 2/ gate application in terms of the ZrO/sub 2/ CVD process.