Half-bridge driver with charge pump based high-side voltage regulator

This paper presents a half-bridge driver to fulfill the requirement for interfacing with MEMs sensors. The upper switch of the driver is implemented by a p-type power transistor to make the driver feasible for pulse density modulated input signal. The high-side “ground” reference voltage V SSH is regulated through the proposed charge pump circuit, which harvests the charges flowing into the V SSH node and boosts them to the supply of the power stage V HV . The charge pump is designed with reversion loss prevention function to achieve a voltage difference close to V DD between V HV and V SSH . The driver is fabricated using the 0.18-µm CMOS process with 24-V LDMOS devices. The measurement results confirm the validation of the half-bridge driver with power efficiency up to 95%.