Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method

Correlation between the dopant concentration of p-type Si and the work function obtained from the onset of the secondary electron (SE) spectrum was investigated. To measure the slight difference of the onset of the SE spectrum precisely, effects of the distortion of the electrostatic field due to the bias voltage applied to the sample were corrected. The present results have revealed that the measurement of the work function by the SE method is applicable to sputter depth profiling of the dopant concentration in semiconductor devices, using the Auger electron spectroscopy system.