On the Correlation of Laser-induced and High-Energy Proton Beam-induced Single Event Latchup

We report on pulsed laser and high-energy proton induced Single Event Latchup (SEL) testing. Arrayed Silicon Controlled Rectifier (SCR) structures that implement various different layout design styles relevant to SEL have been designed and fabricated to make them accessible to both laser and beam testing. Our results demonstrate a qualitative but not quantitative correlation of laser- and beam-induced SEL threshold voltages and cross sections. Therefore, for a complete understanding of SEL sensitivities, pulsed laser injection remains a complementary technique.