Study of chemical reactions at metal-InP interfaces formed by sputter deposition of Pt and Ti

Interfacial reactions between [100] InP and thin films of Pt and Ti were studied. For the Pt/InP interface, an amorphous intermixing layer was formed during the sputter-deposition process even at room temperature. At the as-deposited Ti/InP contact, outdiffusion of In and a strong reaction between Ti and P were observed. Such a reaction process was further enhanced by rapid thermal annealing (RTA), resulting in the formation of an In/Ti-P/InP interfacial configuration.