Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.