Integrated HfO 2 -RRAM to achieve highly reliable, greener, faster, cost-effective, and scaled devices

For the first time, this work demonstrated a 90nm 512Kb SPI HfO2-RRAM product vehicle successfully with reducing read / write power by 18X / 2X, boosting read / write speed by 5X / 10X, and scaling feature size by 2X, compared to presented 512Kb SPI EEPROM; while sustaining high reliability on million cycle endurance, even better post-cycle retention (85°C retention 100years for post 100K cycles), and 150°C high temperature operation, by optimized mismatching, read-integrity, relaxation, and noise as discussed in this work. Technology also offers alternative solution for greener, highly-reliable, and scaled NOR Flash applications. A new plasma dicing technology was implemented to further increase gross die per wafer.