Infrared emitters using III-nitride semiconductors

Abstract III-nitride semiconductors are the materials of choice for green-to-ultraviolet optoelectronics, which has impelled worldwide research efforts on wide band gap GaN and Ga-rich InGaN alloys in the last two decades. Much less effort has been devoted to explore their potential for infrared (IR) wavelengths, where they have to compete with the well-established arsenide and phosphide technologies. In this chapter, we present a summary of the progress and challenges in the various approaches to develop a III-nitride IR technology. We will first describe current achievements in terms of light emitting diodes based on InN and In-rich InGaN alloys. Then, we will introduce the fabrication of IR optoelectronic devices using intra-atomic transitions in the 4 f electronic shell of lanthanide ions incorporated in a GaN-based active region. Finally, we will summarize the state of the art of the nitride-based intersubband technology, where IR transitions occur between confined electronic states in the conduction band of GaN/Al(Ga)N nanostructures, either quantum wells or quantum dots.