Device fabrication for multiple quantum shell nanowires-based laser diodes

We report on the development of laser devices (LDs) fabrication on coaxial multiple-quantum-shell (MQS) nanowires. The MQS nanowires were grown with thin p-GaN shell, tunnel junction and a n-GaN cap layer by metalorganic chemical vapor deposition. Index guided stipe structures were fabricated on the sample, wherein optimized dry and wet etching processes were applied to form mirror on the sidewall. Afterwards, the electronic properties of the MQS laser devices were characterized by current-voltage measurement. Under a high direct-current (DC) density of 3 kA/cm2, uniform blue-light emission was confirmed over the entire stripe.