Structure Effects inthegate-all-around Silicon Nanowire MOSFETs

We theoretically examinetheStructurenanowires, cf., Fig. 1,ontheultimate performance ofSi effects (cross-section shape, channel orientation and NW MOSFETsusing asp3d5s* tight binding approach (6) thesizeofnanowires) ofthegate-all-around Siliconandasemi-classical top-of-barrier ballistic transport model nanowiremetal-oxide-semiconductor field-effect- (7).Basedonthebandstructure effect, ourstudy shows transistors (MOSFETs)ontheir ultimate performance. that thetriangular nanowire MOSFETshavethe Among thesedifferent typesofSilicon nanowirebestperformance withconsidering thesameinsulator MOSFETs,therectangular nanowireMOSFETs capacitance duetothelightest carrier effective mass present thebestdevice performance intermsofthe caused bythestrongest quantumconfinement effects ON-state currents withtheconsideration ofthefixed nanoire compared tothesilicon nanowire MOSFETswiththe nanowiresize.However, thetriangular nanowiredifferent shapes anddifferent orientations. Therectangular MOSFETsshowthelargest bandgap change caused by nanowires, however, havethebestperformance with thequantumconfinement effects, indicating thelargestconsidering thesameinsulator thickness (tox) because the VTvariations. Asthesize ofthenanowire decreases, the ctang the same insulator capacithe quantumeffects playthemoreimportant roleinthe rectangular wirehasthelargest insulator capacitance deviceperformance, forexample, thesignificant performance enhancements intheP-type MOSFETs duetocarrier effective masschanges inP-typeSi nanowire MOSFETs. G Nanowire (a) Channel