Far-Infrared Emission from an Electrically-Injected Semiconductor Device
2018
We demonstrate an electrically-injected device that emits in the Reststrahlen band of GaAs. The device comprises a superlattice designed to generate longitudinal optical (LO) phonons and a grating with a mode at the energy of the phonons. Emission, peaking at the LO phonon, is observed.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
0
Citations
NaN
KQI