Characteristics of Silicon‐Field Emitter Arrays Fabricated by Using Wafers Separated by Implantation of Oxygen

We have presented a novel method for fabricating lateral silicon-field emitter arrays (Si-FEAs) by using wafers separated by implantation of oxygen. This fabrication process has the merit of being simple and compatible with IC processing. The I-V characteristics of the lateral Si-FEAs shown in this paper indicate a Fowler-Nordheim tunneling process.