Electrical properties of as‐grown Hg1−xCdxTe epitaxial layers

The Hall coefficient and resistivity of Hg1−xCdxTe epitaxial layers with 0.195ionization energy determined by the Hall measurements is found to change with the energy gap of Hg1−xCdxTe . The electrical parameters and compositional uniformity (Δx=±0.001) of the epilayer for x=0.30 indicate that the material is comparable to the best reported bulk Hg1−xCdxTe single crystal.