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Experimental influence of the base load effect on SiGe/Si and InGaAs/InP HPTs
Experimental influence of the base load effect on SiGe/Si and InGaAs/InP HPTs
2009
Schiellein
Rosales
Polleux
Duport
Algani
Rumelhard
Merlet
Zerounian
Riet
Godin
Scavennec
Keywords:
Indium phosphide
Electronic circuit
Gallium arsenide
Silicon-germanium
Stimulated emission
Optical fiber
Optoelectronics
Electrical impedance
Indium gallium arsenide
Materials science
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