Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

The characteristics of Stacked Nanosheet are investigated, focusing on channel geometry. For the first time, “narrow sheet effect” on carrier transport is observed. By comparing measured electron $(\mu_{e})$ and hole $(\mu_{h})$ mobilities, and the n-type/p-type opposite transconductance ( $gm$ ) trends versus sheet width ( $Wsheet$ ), we show that the mobility dependency on $Wsheet$ is attributed to reduced (100) plane conduction contribution as $Wsheet$ shrinks.