Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. A sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.