A semi-empirical approach to analyze small geometry effects in LDD MOSFETs

A simple semi-empirical model for small geometry (short and narrow) lightly doped drain MOSFET is developed and the expressions for threshold voltage, drain current, conductances, cut-off frequency and transit time are derived overcoming the complexity in analysis when short channel, LDD and narrow width effects are considered simultaneously. The results so obtained are compared with the experimental data. The impact of scaling the device dimensions on each of the device parameters is also studied explicitly and the bodyfactors are evaluated using Lagrangian interpolation techniques.