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High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON
High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON
2018
Il-Hwan Hwang
Su-Keun Eom
Gwang-Ho Choi
Myoung-Jin Kang
Jae-Gil Lee
Ho-Young Cha
Kwang-Seok Seo
Keywords:
Power semiconductor device
Physics
Nuclear magnetic resonance
Insulator (electricity)
High-electron-mobility transistor
Optoelectronics
Condensed matter physics
dual gate
algan gan
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