Defect Engineering in Bottom-up Grown Nanowires

Presence of both Fe +3 and Fe +2 encourage the formation of different germanides at the solid catalytic drop during nanowire growth. Epitaxial transformation of twin defect from seed to nanowire The defect sites in the seed particle could exhibit a preferential diffusion path for Ge atoms to be incorporated at the interface due to enhanced kinetics in chemical diffusion along the twinned planes. Usually twinning defects formed during nucleation in metal seed-semiconductor nanowire interfaces provide a preferential addition site at the triple phase boundary for diffusing species and maintaining subsequent growth in the ˂112˃ direction.