Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 10 12 cycles), excellent V th stability (5%), fast (< 10 ns) switching, and promising scaling properties

In this work, thin film (down to 10 nm) $(\mathrm{V}_{1-\mathrm{x}}\text{Cr}_{\mathrm{x}})_{2}\mathrm{O}_{3}$ Mott-oxide based nano-devices (electrode width down to 120 nm) are fabricated for the first time. The devices show volatile threshold switching and NDR caused by thermal feedback. Fast ( 12 cycles. Thickness and area dependence of the NDR curves are consistent with uniform volume switching and are explained with a thermal feedback model calibrated to the temperature dependent conductance of the $(\mathrm{V}_{1-\mathrm{x}}\text{Cr}_{\mathrm{x}})_{2}\mathrm{O}_{3}$ films, enabling predictions for further scaled device geometries.