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D. Bedau
D. Bedau
Western Digital
Thin film
Oxide
Thermal
Optoelectronics
Electrode
2
Papers
12
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Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application
2019
IMW | International Memory Workshop
T. Hennen
D. Bedau
J. A. J. Rupp
Carsten Funck
Stephan Menzel
Michael Grobis
Rainer Waser
Dirk Wouters
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Citations (5)
Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 10 12 cycles), excellent V th stability (5%), fast (< 10 ns) switching, and promising scaling properties
2018
IEDM | International Electron Devices Meeting
T. Hennen
D. Bedau
Jonathan A. J. Rupp
Carsten Funck
Stephan Menzel
Michael Grobis
Rainer Waser
Dirk J. Wouters
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Citations (7)
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