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Effects of Substrate Termination on Ron Increase under Stress in 650 V GaN Power Devices
Effects of Substrate Termination on Ron Increase under Stress in 650 V GaN Power Devices
2021
Feiyu Li
Wang Ronghua
Huolin Huang
Ren Yongshuo
Guangshan Ren
Zhuang Liang
Fubin Zhou
Cheng Wanxi
Liang Huinan
Keywords:
Power semiconductor device
Substrate (chemistry)
Optoelectronics
Materials science
Stress (mechanics)
Correction
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