Superlattice-like GeTe/Sb thin film for ultra-high speed phase change memory applications

Abstract The GeTe/Sb superlattice-like thin films are systematically investigated for the potential application in phase change memory. Compared with GeTe, GeTe/Sb film has lower crystallization temperature and activation energy. Besides, the internal stress of GeTe/Sb is less than GeTe during the crystallization. The superlattice-like structure is observed by transmission electron microscopy. The polycrystalline phase is confirmed by selected area electron diffraction. The reversible resistance switching can be realized for GeTe/Sb-based phase change memory device with an electric pulse of 8 ns width. In addition, GeTe/Sb shows a good endurance of 6.3 × 10 6  cycles.