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Nonradiative recombination due to Ar implantation induced point defects in GaInN/GaN quantum wells
Nonradiative recombination due to Ar implantation induced point defects in GaInN/GaN quantum wells
2013
Torsten Langer
Hans-Georg Pietscher
Holger Joenen
Uwe Rossow
Heiko Bremers
Andreas Hangleiter
Dirk Menzel
Keywords:
Optoelectronics
Crystallographic defect
Recombination
Ion
Photoluminescence
Quantum well
Epitaxy
Ion implantation
Annealing (metallurgy)
Materials science
Correction
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