The new power semiconductor generation: 1200V IGBT4 and EmCon4 Diode

This paper presents Infineonpsilas latest 1200 V power semiconductor generation: IGBT4 and EmCon4 diode. The new technology comes as a family optimized for applications in three different power levels: low, medium, and high power. Each part is balanced accordingly in its dynamic and static losses, switching frequency, and softness. In this paper the new technology is introduced, the electrical and thermal performance discussed in detail.