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Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
2019
Jörg Pezoldt
Charbel Zgheib
Thomas Stauden
Gernot Ecke
Thomas Kups
Heiko O. Jacobs
Petia Weih
Keywords:
Composite material
Molecular beam epitaxy
Germanium
Materials science
Epitaxy
Silicon carbide
Optoelectronics
Doping
cubic silicon carbide
solid solubility
Correction
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