Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Abstract High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.