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The next generation 6.5kV IGBT
The next generation 6.5kV IGBT
2014
John F. Donlon
Eric R. Motto
Eugen Wiesner
Eckhard Thal
Kenji Hatori
Yasuhiro Sakai
Shuichi Kitamura
Tetsuo Motomiya
Kenji Ota
Yumie Kitajima
Shinichi Iura
Hiroshi Yamaguchi
Kazuhiro Kurachi
Keywords:
Gate driver
Electronic engineering
Engineering
Current injection technique
Insulated-gate bipolar transistor
Electrical engineering
Gate turn-off thyristor
Correction
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