Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Abstract InGaN/GaN multiple quantum well structures were grown on bulk GaN and on sapphire substrates using the metalorganic vapor-phase epitaxy in order to study the influence of hydrogen during the growth of the GaN barriers. This hydrogen flow had the following effects on the structures: (i) the thickness of the QWs was reduced, (ii) the indium concentration in the QWs was decreased and (iii) the growth rate of the quantum barriers was increased.