Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates

Abstract We demonstrated the operation of GaN-on-Si metal–oxide–semiconductor field effect transistors (MOSFETs) for power electronics components. The interface states at SiO 2 /GaN were successfully improved by annealing at 800 °C for 30 min in N 2 ambient. The interface state density was less than 1 × 10 11  cm –2  eV −1 at E c  − 0.4 eV. The n + contact layers as the source and drain regions as well as the reduced surface field (RESURF) zone were formed using a Si ion implantation technique with the activation annealing at 1200 °C for 10 s in rapid thermal annealing (RTA). As a result, we achieved an over 1000 V and 30 mA operation on GaN-on-Si MOSFETs. The threshold voltage was +2.6 V. It was found that the breakdown voltage depended upon the RESURF length and nitride based epi-layer thickness. In addition, we discussed the comparison of each performance of GaN-on-Si with -sapphire devices.