Interlocking, vertical, native capacitor

Metal capacitor structure having a plurality of line level structures (15, 16, 25, 26) and at least one Durchkontaktierungsebenenstruktur (31, 32, 33, 34, 41 or 42), on each line level, the plurality of line level structures (15, 16, 25, 26): a first line level structure (15 or 25) having a first rectangular tab structure (13 or 23) which has a form of a first rectangular parallelepiped, and a first plurality of parallel metal lines (11 or 21) which is rectangular from a side wall of the first tab structure (13 or 23) protrude and adjacent thereto; and a second line level structure (16 or 26) (12 or 22) having a second rectangular tab structure (14 or 24) having a shape of a second rectangular parallelepiped, and a second plurality of parallel metal lines of a sidewall of the second rectangular tab structure (14 or 24) protrude adjacent thereto, wherein: the first plurality of parallel metal lines (11 or 21) and the second plurality of parallel metal lines (12 or 22) together form an interlocking, uniform pitch structure ((11, 12) or (21, 22)) having a pitch in one direction having; and projecting the first rectangular tab structure (13 or 23) and the second rectangular tab structure (14 or 24) not in a region between the side wall of the first rectangular tab structure (13 or 23) and the side wall of the second rectangular tab structure (14 or 24); and each of the plurality of first rectangular tab structures (13, 23) and the plurality of second rectangular tab structures (14, 24) has a tab width which is at least 150% of the grid spacing; and ...