Improving adhesion to copper interconnects in semiconductor devices

Poorly adherent layers 5 such as silicon nitride and silicon dioxide exhibit improved adhesion to a copper member 1 by providing an intervening germanium-containing layer 3. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.