Impacts of metastable defect states on gate oxide trapping in nanoscale MOS devices

In this paper, a modified 4-state trap model (4SM) is proposed and adopted in practical simulations including measurement delays, which can well explain the different frequency dependences of single oxide trapping and AC NBTI observed in experiments. The results also indicate the most probable activation energy of high-κ gate oxide traps, which is helpful for deep understanding of the physical origin and the impact of trapping/detrapping in nanoscale MOS devices under different frequencies.