Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy

1991 
Abstract The composition of In x Ga 1− x As stripes of different width, selectively grown by low pressure MOVPE or MOMBE, was determined from the eigenfrequency of the Ga-As lattice vibration using Raman spectroscopy. In contrast to MOMBE, structures grown by MOVPE show a strong enhancement of the In content with decreasing width and increasing distances between the stripes. Comparative studies on MOVPE grown In x Ga 1− x P structures indicate a behavior similar to that observed in the case of In x Ga 1− x As.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    5
    References
    59
    Citations
    NaN
    KQI
    []