Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy
1991
Abstract The composition of In x Ga 1− x As stripes of different width, selectively grown by low pressure MOVPE or MOMBE, was determined from the eigenfrequency of the Ga-As lattice vibration using Raman spectroscopy. In contrast to MOMBE, structures grown by MOVPE show a strong enhancement of the In content with decreasing width and increasing distances between the stripes. Comparative studies on MOVPE grown In x Ga 1− x P structures indicate a behavior similar to that observed in the case of In x Ga 1− x As.
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