Room temperature operation of a GaAs tristate switch with a double triangular barrier structure

A new GaAs double triangular barrier (DTB) switch, prepared by molecular-beam epitaxy (MBE), using p+-n-δ(p+)-n-δ(p+)-n-n+ structure was fabricated and demonstrated. A tristate switching behaviour due to the sequential collapse of internal barriers was clearly observed for the first time. This phenomenon introduced triple stable regions into the device operation. Based on a proper circuit design, the structure studied has good potential for tristate-logic applications.