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GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity
GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity
2019
K. Shinohara
C. King
Eric J. Regan
J. Bergman
Andrew D. Carter
Andrea Arias
Miguel Urteaga
Berinder Brar
Ryan Page
Reet Chaudhuri
Moududul Islam
Kazuki Nomoto
Huili Grace Xing
Debdeep Jena
Keywords:
Electron mobility
Field-effect transistor
Linearity
Optoelectronics
Wave power
Capacitance
Materials science
Communication channel
Electric field
radio communications
Correction
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