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Moududul Islam
Moududul Islam
Optoelectronics
Heterojunction bipolar transistor
Doping
Gaussian
Transistor
2
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2024
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GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity
2019
K. Shinohara
C. King
Eric J. Regan
J. Bergman
Andrew D. Carter
Andrea Arias
Miguel Urteaga
Berinder Brar
Ryan Page
Reet Chaudhuri
Moududul Islam
Kazuki Nomoto
Huili Grace Xing
Debdeep Jena
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Base transit time of a Si/SiGe HBT considering gaussian doped base
2010
Moududul Islam
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