Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates

We report further x‐ray double‐crystal diffractometry experiments on the structural perfection of the semi‐insulating (Ga, Fe) double‐doped LEC‐grown InP substrates. Series of x‐ray reflection topographs were taken at different settings on the rocking curves using the double‐crystal arrangement in parallel setting. Variations in lattice‐plane spacings and lattice‐plane orientations induced by Ga inhomogeneity were determined. (In, Ga)As layers grown by molecular‐beam epitaxy on (001) oriented (Ga,Fe) double‐doped InP substrates were also characterized.