Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process
2012
The best strategy to transfer nanopatterns formed from the self assembly of PS/PMMA bloc copolymers into a silicon
substrate is investigated. We show that a hard mask patterning strategy combined with a plasma cure treatment of the PS
mask are necessary to reproduce the PS mask pattern into the silicon with a good critical dimension control. In addition,
typical silicon etching plasma condition must be revisited to allow the etching of sub-20 nm holes. These results indicate
that block copolymer can be readily used as etching masks for advanced CMOS technology.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
4
Citations
NaN
KQI