Photoconductor pulse generators and sampling gates for characterization of high-speed devices and transmission lines

We describe photoconductive semiconductor devices developed for application in diagnostics of high-speed electronic devices and circuits. Both pulse generation and sampling functions are provided by these ultrafast photoconductors. The photoresponse of different semiconductor materials (GaAs, InP, Si) that have been ion bombarded (Ar, H, He, Ne, 0, Si) was investigated and characterized. Response times as short as 1 picosecond have been observed. High frequency propagation characteristics of microstrip and coplanar waveguide transmission lines have been studied and modelled. Application of this measurement technique to the characterization of a microwave GaAs transistor is presented.