Cubic Sn from liquid phase epitaxy on InSb

Abstract Islets of α-Sn have been epitaxially grown by the dipping liquid phase epitaxy (LPE) technique on (111)B InSb substrates in Sn/Hg melt at 12.5°C. The α-Sn phase is stable to approximately 60°C, which is comparable to the results obtained by molecular beam epitaxy (MBE) and evaporation in UHV techniques reported earlier by other workers.