Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

Display Omitted Highly crystalline BaTiO3 was integrated on Si using molecular beam epitaxy.Electro-optic response was evaluated for a-axis, c-axis, and mixed films.Increased a-axis fraction correlated with increased electro-optic response.Post-deposition oxygen anneal improved crystallinity and reduced leakage current. High-quality epitaxial BaTiO3 (BTO) on Si has emerged as a highly promising material for future electro-optic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O2 rapid thermal anneal at 600?C for 30min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure.