ZnO-based material and UV detector

ZnO is the most promising material for the application of an ultraviolet (UV) detector. However the shortage of ptype ZnO becomes the biggest blockage for fabricating ZnO-based semiconductor device. In this paper, following experiments had been done: Firstly, the zinc nitride powders were synthesized through the nitridation reaction of Zn power with NH3, and the optimized synthesis temperature was at 600°C. Next, the zinc nitride powder was fabricated into a zinc nitride sputtering target by a single pressing process. Thirdly a thin layer of zinc nitride film was formed on silicon and quartz substrate using magnetron sputtering method. Fourthly, the zinc nitride film was oxidized into p-type ZnO, and the best optimized temperature for forming p-type ZnO by oxidizing Zn 3 N 2 thin film was at 500°C. Lastly, the ohmic contact for p-ZnO and ZnO based detector were fabricated. It was found Al and Ni/Au showed ohmic contact properties to n- Si and p-ZnO, respectively, and the p-ZnO/n-Si junction as a UV detector was feasible.