Anti-Reflection Properties of Black Silicon Coated with Thin Films of Metal Oxides by Atomic Layer Deposition

The results of experimental studies of the anti-reflection properties of black silicon (b-Si) layers coated with thin films of TiO2, HfO2, and Sc2O3 metal oxides by atomic layer deposition (ALD) are presented. An improvement in the antireflection properties of b-Si in a wide spectral range is shown. It is expedient to use the investigated ALD films in solar cells as an effective passivating coating of the b-Si surface.