Crystal Structure Analysis of the Mg2Si1-xSnx System Having Potential Thermoelectric Properties at High Temperature

Laves phases of C15 type of the system Mg2Si1-xSnx with x = 0, 0.4, 0.6 and 1 were synthesized in polycrystalline state in tantalum ampoule heated by high frequency coupling. The as-cast materials were analysed first at room temperature by X-ray diffraction (XRD). Systematically, XRD patterns were recorded up to 700 °C and Differential Scanning Calorimetry analysis was performed up to 1200°C to control the chemical and structural phase transformations. From these experiments, a C15 to C36 structure transformation was pointed out around 600°C in Mg2Si1-xSnx.solid solutions.