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Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
2020
Arkka Bhattacharyya
Praneeth Ranga
Saurav Roy
Jonathan Ogle
Luisa Whittaker-Brooks
Sriram Krishnamoorthy
Keywords:
Thin film
Epitaxy
vapor phase
Silicon
Dopant
Doping
Crystal
Analytical chemistry
volume concentration
Materials science
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