Simulation for deposition of ZnO thin film layer by kinetic Monte Carlo method

AbstractKinetic Monte Carlo method was used to simulate the deposition of ZnO thin film layers. For this simulation, parameters for atom absorption, desorption and surface diffusion were incorporated to perform more realistic model of deposition. A new approach was used where the diffusion process was integrated as part of the deposition process. Simulations were carried out at different substrate temperatures. Two- and three-dimensional growth mechanisms were simulated using this model. Surface roughness can be estimated from the ratio of the atoms at the edge of the islands to the total surface sites. The number of Zn and O adatoms on the surface as a time function was analysed.