Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane

The III-Nitrides, especially AlGaN/GaN devices can be widely used in micro-electro-mechanical sensors thanks to their excellent mechanical and electric properties. In this work, we investigate influence of the applied mechanical load on the source-drain current of AlGaN/GaN C-HEMTs located on the clamped edge of the cantilever beam and the membrane, respectively. A linear dependence of the output current on the calculated strain is observed.