Direct Growth of Perovskite Crystals on Metallic Electrodes for High‐Performance Electronic and Optoelectronic Devices

Metal halide perovskite has attracted enhanced interest for its diverse electronic and optoelectronic applications. However, the fabrication of micro- or nanoscale crystalline perovskite functional devices remains a great challenge due to the fragility, solvent, and heat sensitivity of perovskite crystals. Here, a strategy is proposed to fabricate electronic and optoelectronic devices by directly growing perovskite crystals on microscale metallic structures in liquid phase. The well-contacted perovskite/metal interfaces ensure these heterostructures serve as high-performance field effect transistors (FETs) and excellent photodetector devices. When serving as an FET, the on/off ratio is as large as 10(6) and the mobility reaches up to approximately 2.3 cm(2) V(-1) s(-1) . A photodetector is displayed with high photoconductive switching ratio of approximately 10(6) and short response time of approximately 4 ms. Furthermore, the photoconductive response is proved to be band-bending-assisted separation of photoexcited carriers at the Schottky barrier of the silver and p-type perovskites.